The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance.
Features:
- Small signal N-Channel MOSFET.
- Drain-Source Voltage (VDS) is 60V.
- Continuous Drain Current (ID) is 200mA.
- Pulsed Drain Current (ID-peak) is 500mA.
- Gate threshold voltage (VGS-th) is 3V.
- Gate-Source Voltage is (VGS) is ±20V.
Specifications:
| Part Number | 2N7000 |
| Type | Small signal N-Channel MOSFET |
| Drain Source Voltage | 60V |
| Gate Source Voltage | 20V |
| Continuous Drain Current | 200mA |
| Drain Gate Voltage | 60V |
| Power Dissipation | 350mW |
| Package | TO-92 |
| Country of Origin | China |
