IRFZ44 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 94 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Features
- Advanced Process Technology
- Ultra-Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Lead-Free, RoHS Compliant
Specification
| Part Number | IRFZ44 |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 55V |
| Continuous Drain Current(Id) | 49A |
| Drain Source Resistance (Rds on) | 0.0175 ohms |
| Gate Source Voltage (Vgs) | 20V |
| Power Dissipation | 94W |
| Package Type | TO-220AB |
| Country of Origin | China |
