2N6027 Programmable Unijunction Transistor 40V 300mW is designed to enable the engineer to “program’’ unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. The application includes thyristor–trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO–92 plastic package for high–volume requirements, this package is readily adaptable for use in automatic insertion equipment.
Features
- Programmable- RBB, η, IV and IP
- Low On-State Voltage -1.5 Volts Maximum @ IF = 50 mA
- Low Gate to Anode Leakage Current -10 nA Maximum
- High Peak Output Voltage -11 Volts Typical
- Low Offset Voltage - 0.35 Volt Typical (RG = 10 k ohms)
Specifications
| Model | 2N6027 |
| Brand | ON Semiconductor |
| Gate to Cathode Forward Voltage | 40V |
| Gate to Cathode Reverse Voltage | 5V |
| Gate to Anode Reverse Voltage | 40V |
| Anode to Cathode Voltage | 40V |
| Offset Voltage | 1.6V |
| DC Anode Forward Current | 150mA |
| DC Gate Current | 50mA |
| Non-Repetitive Peak Forward Current | 5A |
| Operating Temperature | -50°~100°C |
| Power dissipation | 300mW |
| Country of Origin | China |
