G20N60 is a high voltage switching MOS gated device that combines the finest qualities of MOSFETs and bipolar transistors. The component combines a bipolar transistor's low on-state conduction loss with a MOSFET's high input impedance to provide the desired effect. Between 25 and 150 degrees Celsius, the significantly lower on-state voltage loss hardly varies slightly. The IGBT is utilized in anti-parallel with the RHRP3060 diode. Many high voltage switching applications running at moderate frequencies and requiring minimal conduction losses are excellent candidates for the IGBT.
Features
- Highly reliable
-
40A, 600V at TC= 25oC
- Short Circuit Rated
- Low Conduction Loss
-
It has high capability to reduce power losses
Specification
| Model | G20N60 |
| Type | N-Channel IGBT |
| Peak Repetitive Reverse Voltage | 600V |
| Package | TO-247 |
| Brand name | Fairchild |
| Typical fall time | 140nS |
| Maximum Power Dissipation | 165W |
| Operating and Storage Temperature Range | -65 to 175 centigrade |
| Country of Origin | China |
