Its IR2101S 100mA MOSFET/IGBT SOIC-8 Package‚ High voltage‚ high-speed power MOSFET and IGBT drivers with independent high and low side referenced output channels are the IR2101(S) and IR2102(S). Roughized monolithic construction is made possible by proprietary latch-immune CMOS and HVIC technologies. The rationale input is viable with standard CMOS or LSTTL yield‚ down to 3.3V rationale. The result drivers include a high heartbeat flow cushion stage intended for the least driver cross-conduction. The drifting channel can be utilized to drive an N-channel power MOSFET or IGBT in the high-side design which works up to 600 volts.
Features:
- Floating channel designed for bootstrap operation
- Fully operational to +600V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20V
| Specifications | |
|---|---|
| Part Number | IR2101S |
| Mounting Style | SMD |
| Current | 100mA |
| Voltage | 600V |
| Type | MOSFET |
| Package | SOIC-8 |
