The IRFP450 N-Channel enhancement mode silicon gate power field effect transistor is a high-performance power MOSFET that has been developed‚ tested‚ and certified to resist a certain amount of energy in the breakdown avalanche mode of operation. These power MOSFETs are all intended for use in switching regulators‚ switching convertors‚ motor drivers‚ relay drivers‚ and drivers for high power bipolar switching transistors that require high speed and low gate drive power. These may be run straight from integrated circuits.
Features:
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Single Pulse Avalanche Energy Rated
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SOA is Power Dissipation Limited
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Its switching speed is too fast
| Specifications | |
|---|---|
| Part Number | IRFP450 |
| Operating Temperature Range | -55 - 150°C |
| Mounting Style | Through Hole |
| Power Dissipation | 200W |
| Current | 14A |
| Voltage | 500V |
| Type | N-Channel Power MOSFET |
| Package | TO-247 |
