The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications. The devices are available in various surface-mount and through-hole packages with industry-standard footprints for ease of design.
Features
- Planar cell structure for wide SOA
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- High-current rating
- Increased ruggedness
- Wide availability from distribution partners
- High performance in low-frequency applications
- Standard pin-out allows for drop-in replacement
- High current capability
Specifications
| Model | IRFZ44N |
| Brand | Infineon |
| ID (@25°C) max | 49 A |
| Mounting | Through Hole |
| Ptot max | 83 W |
| Package | TO-220 |
| Polarity | N |
| QG (Typ@10V) | 42 nC |
| Qgd | 15.3 nC |
| RDS (on) (@10V) max | 17.5 mΩ |
| RthJC max | 1.8 K/W |
| Tj max | 175 °C |
| VDS max | 55 V |
| VGS(th) min max | 3 V 2 V 4 V |
| VGS max | 20 V |
| Country of Origin | China |
