2SC3998 Transistor is used in applications where high-speed switching and higher breakdown voltage are required.
Features
- High speed (tf=100ns typ).
- High breakdown voltage (VCBO=1500V).
- High reliability (Adoption of HVP process).
- Adoption of MBIT process.
Specifications
| Model | 2SC3998 |
| Brand | WG |
| Material of Transistor | Si |
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 250V |
| Maximum Collector-Base Voltage |Vcb| | 1500V |
| Maximum Collector-Emitter Voltage |Vce| | 800V |
| Maximum Emitter-Base Voltage |Veb| | 7V |
| Maximum Collector Current |Ic max| | 25A |
| Package | TO264 |
| Max. Operating Junction temperature | 175C |
| Country of Origin | China |
