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BS170 N-Channel MOSFET TO-9...

The BS170N is a small signal N-channel Enhancement Mode MOSFET. It is made using high cell DMOS technology to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It offers stable, quick switching performance and is suitable for use in AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency, tiny servo motor control circuits, power MOSFET gate drivers, and other switching applications. The BS170N transistor has a drain to source voltage of 60V and a constant drain current of 500mA. It features a 2.5-ohm on-state resistance and can tolerate peak currents of up to 1200mA.

Features

  • Fast Switching Speed
  • High Input Impedance
  • CMOS Logic Compatible Input
  • No Thermal Runaway or Secondary Breakdown
  • Voltage controlled small signal switch
  • Drain-source voltage: max. 60V
  • Gate-source voltage: max. 15V
  • Drain current (DC): max. 500 mA
  • High saturation current capability
  • Operating temperature: -55°C to +150 °C
Specifications
Transistor Polarity N-Channel
Number of Channel 1
Drain Source Breakdown Voltage (Vds) 60V
Continuous Drain Current (Id) 500mA
Drain Source Resistance (Rds) 5 ohm
Gate Source Voltage(Vgs) 20V
Power Dissipation 350mW
Package TO-92
Country of Origin China

 

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