A high voltage, high speed power MOSFET and IGBT driver is the IR2117/IR2118(S). Ruggedized monolithic construction is made possible by proprietary HVIC and latch immune CMOS technology. The normal CMOS outputs are compatible with the logic input. A high pulse current buffer stage with minimal cross-conduction is a feature of the output driver. An N-channel power MOSFET or IGBT with a high side or low side configuration and a maximum operating voltage of 600 volts can be driven using the floating channel.
Features
- Gate drive supply range from 10 to 20V
- Under voltage lockout
- CMOS Schmitt-triggered inputs with pull-down
- Output in phase with input (IR2117) or out of phase with input (IR2118)
- • Also available LEAD-FREE
Specification
| Model | IR2117 |
| Type | IC |
| Logic supply voltage | -0.3 to 25 V |
| Logic input voltage | -0.3 to 0.3 V |
| Junction temperature | 150°C |
| Storage temperature | -55 to 150°C |
| Lead temperature for soldering | 300°C |
| Package power dissipation | 1 W |
| Country of Origin | China |
 
