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IRF540 N-Channel 33A 100V P...

IRF540 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Features

  • It has 100% avalanche rated
  • It has Fast switching system
  • Ease of paralleling
  • New high voltage benchmark
  • Simple drive requirements
  • Low on-resistance

Applications

  • Switching high power devices
  • Motor speed control
  • LED dimmer and flasher
  • Converters and inverters circuits
Specification
Part Number  IRF540 
Package TO-220-3
Polarity N Channel 
Drain-Source Breakdown Voltage 100 V
Continuous Drain Current 33 A
Gate-Source Voltage 20 V
Power Dissipation 140 W
Gate Charge 47.3 nC
Country of Origin China
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