IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness. The I2PAK (TO-220) is a through-hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. IRF Mosfets need 10V at the gate to fully turn on. IRL Mosfets need 5V at the gate to fully turn on.
Features:
- Its N-Channel MOSFET
- Its used for Switching application
- Its Package is TO-220
- Its Power dissipation is 60W
Specification
| Part Number | IRL520 |
| Type of Control Channel | N-Channel |
| Maximum Power Dissipation | 60W |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | 10V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Current | 9.2A |
| Maximum Junction Temperature | 175°C |
| Rise Time | 64nS |
| Drain Source Capacitance | 150 pF |
| Maximum Drain Source ON state Resistance | 0.27 ohm |
| Country of Origin | China |
