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ONSEMI 40N60 600V 40A IGBT ...

Description

Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.

Features

  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
  • High Input Impedance
  • Fast Switching
  • Qualified to Automotive Requirements of AEC−Q101 (FGH40N60SFDTU−F085)
  • These Devices are Pb−Free and are RoHS Compliant

Applications

  • Automotive Chargers, Converters, High Voltage Auxiliaries
  • Inverters, PFC, UPS

Datasheet

Specifications
Model FGH40N60SFD
Brand Onsemi/FSC
Collector to Emitter Voltage 600V
Gate to Emitter Voltage 20V
Transient Gate−to−Emitter Voltage 30V
Collector Current 40 C-80 C
Pulsed Collector Current 120A
Operating Junction Temperature -55°C - 150°C
Power Dissipation 160W-290W
Package TO-247
Country of Origin China
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