IGBT MOSFET

30N60A4D is a MOS gated high voltage switching device that combines the finest qualities of MOSFETs and bipolar transistors. This component combines the low on-state conduction loss of a bipolar transistor with the high input...

Fairchild's shorted-anode trench IGBTs offer excellent conduction and switching performances for soft switching applications by utilizing cutting-edge field stop trench and shorted anode technologies. The device has great avalanche capability and may run in parallel....

G20N60 is a high voltage switching MOS gated device that combines the finest qualities of MOSFETs and bipolar transistors. The component combines a bipolar transistor's low on-state conduction loss with a MOSFET's high input impedance...

G30H603 is a High speed-switching IGBT MOSFET its maximum operating voltage is 600V. It has three terminal gate, a collector and an emitter used to emit the electrons, and the collector collects the emitted electrons by...

IXGP48N60A3 is a type of MOSFET its operating voltage is 600V, And its operating current is 48A. It has mainly designed to use in switching applications it's used in SMPS,  UPS, Snubber and power switching...

G4PC50FD  is an insulated gate bipolar transistor with ultrafast recovery time. Just because of its recovery time, it's used in fast switching applications and There are huge applications of power MOSFET in SMPS and UPS....

G4PF50WD is an IGBT Ultrafast recovery diode mainly used in fast switching applications, and It's an electronic switch where we do not need manual movement for switching. Its recovery time is too fast this features...

Its 60N100 1000V 60A A NTP Trench IGBT TO-264 3L Package. It provides excellent switching and conduction performance, great avalanche robustness, and simple parallel operation. The performance of this device is ideal for harsh switching applications...

The Non-Punch Through (NPT) IGBT design is the HGTG11N120CND. This IGBT belongs to the family of MOS-gate high voltage switches. IGBTs combine the some elements ,bipolar transistors and MOSFETs. This device combines the low on-state conduction...

IXXH30N60B3D1 is a 600V IGBT Transistor in the TO-247AD-3 package. It is Extreme Light Punch Through IGBT for 5-30 kHz Switching. Their low gate charges also help reduce gate drive requirements and switching losses. These devices have...

STMicroelectronics has created an innovative family of IGBTs, the Power MESHTM IGBTs, with remarkable performances using the most recent high voltage technology based on a proprietary strip arrangement. A family with the suffix "W" is...

K75T60 is an IGBT fast recovery Anti-parallel diode, a switching device mainly used in switching applications. Its recovery time is too fast. Just because of the fast recovery, the switching speed is too fast. It's...