MOSFET

IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-220) is a through-hole power package capable of accommodating die size up...

P-Channel MOSFETs are the best option for high-side switches as a result of this. For low-voltage driving applications and non-isolated POLs, where space is at a premium, the design's simplicity is advantageous. The streamlined gate...

Its BF245A 30V 10mA N-Channel-Depletion JFET TO-92 Package Amplifier. It is primarily intended for use as an amplifier in the VHF and UHF frequency bands as well as an audio frequency amplifier. Due to the transistor's high...

STP55NF06 power MOSFETs have been developed using STMicroelectronics' unique "Single Feature Size" strip-based process, which is specifically designed to minimise input capacitance and gate charge. The resulting transistor shows extremely high packing density for low...

 50N06L N-Channel enhancement mode power field effect transistors were created to use the exclusive planar stripe DMOS process developed by Fairchild. This cutting-edge technology has been specifically designed to reduce on-state resistance, deliver more excellent...

The UTC8N80 is an N-channel mode power MOSFET that offers customers DMOS and planar stripe technology by utilising UTC's cutting-edge technology. This innovation permits a minimum enhanced switching performance with low on-state resistance. It can...

The IR MOSFET family of Power MOSFETs uses tried-and-true silicon manufacturing techniques to provide designers with a wide range of products to serve several applications, including battery-powered devices, DC motors, inverters, SMPS, lighting, load switches,...

IRFP264 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast switching, ruggedized device design, low...

IRF9530 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize...

This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications. Features： 1) VDS=60V, ID=&0A, RDS(ON)<10mΩ @VGS=10V...

The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ. It also has a VGS of 20V at which the MOSFET will start conducting....

The AO3401 P-Channel MOSFET by Alpha & Omega uses advanced trench technology to provide outstanding RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is appropriate for use as a load switch...

The AO3402 30V 4A N-Channel MOSFET by Alpha & Omega uses advanced trench technology to provide outstanding RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is appropriate for use as...

Vishay's SI2301 is a P Channel Mosfet in a SOT-23 package. It's a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has a ±8 VDC Gate to...

Vishay's SI2302 is an N Channel Mosfet in a SOT-23 package. It's a MOSFET with a power rating of 1.25 watts and a voltage rating of 2.5 volts. It has a ±8 VDC Gate to...