MOSFET

DOD15N03 N-Channel Power MOSFET by Doingter is used for Fast Switching and Simple Drive Requirements. Features include Low Gate Charge and RoHS Compliant. Drain Source Voltage is 30V, and Gate Source Voltage is ±20V. It can be...

Third generation power MOSFETs from INFINEON provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. At power dissipation levels of up to 50 W, the TO-220 package...

The ISL83202 is a medium-frequency H-Bridge FET driver with a peak drive current of 1A (typ) that is intended for driving high- and low-side N-Channel MOSFETs in medium-voltage applications. The ISL83202, which is optimized for...

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

2SK3878 is a new generation high voltage MOSFET that employs an improved charge balance mechanism to achieve exceptional low on-resistance and lower gate charge performance. The cutting-edge technology has been designed to minimise conduction loss,...

An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is...

2SK2225 is a MOSFET usually used for high-speed switching purposes. It has a break-down voltage and low drive current. The input impedance of this MOSFET is much higher than that of the general transistor. The...

The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for...

A metal–oxide–semiconductor field-effect transistor (MOSFET)is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of the device.  SuperFET II MOSFET is a brand-new high-voltage super-junction (SJ) MOSFET family that uses...

 An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is...

2SK2225 is a MOSFET usually used for high-speed switching purposes. It has a break-down voltage and low drive current. The input impedance of this MOSFET is much higher than that of the general transistor. The...

The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for...

The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for...

The IXFH20N100 1000V 20A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These are ideal for...

A Link Switch-HP device monolithically integrates a controller and high-voltage power MOSFET into one package.. It contains a newly created analogue control system that provides primary-side regulated (PSR), continuous conduction mode (CCM), power supply up...