MOSFET

IRL520N is a third-generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-220) is a through-hole power package capable of accommodating die size up...

P-Channel MOSFETs are the best option for high-side switches as a result of this. For low-voltage driving applications and non-isolated POLs, where space is at a premium, the design's simplicity is advantageous. The streamlined gate...

Its BF245A 30V 10mA N-Channel-Depletion JFET TO-92 Package Amplifier. It is primarily intended for use as an amplifier in the VHF and UHF frequency bands as well as an audio frequency amplifier. Due to the transistor's high...

 50N06L N-Channel enhancement mode power field effect transistors were created to use the exclusive planar stripe DMOS process developed by Fairchild. This cutting-edge technology has been specifically designed to reduce on-state resistance, deliver more excellent...

The UTC8N80 is an N-channel mode power MOSFET that offers customers DMOS and planar stripe technology by utilising UTC's cutting-edge technology. This innovation permits a minimum enhanced switching performance with low on-state resistance. It can...

The IR MOSFET family of Power MOSFETs uses tried-and-true silicon manufacturing techniques to provide designers with a wide range of products to serve several applications, including battery-powered devices, DC motors, inverters, SMPS, lighting, load switches,...

IRFP264 N channel is specifically designed for automotive applications that utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. It provides the best combination of fast switching, ruggedized device design, low...

IRF9530 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize...

This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications. Features： 1) VDS=60V, ID=&0A, RDS(ON)<10mΩ @VGS=10V...

The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ. It also has a VGS of 20V at which the MOSFET will start conducting....

An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is...

2SK2225 is a MOSFET usually used for high-speed switching purposes. It has a break-down voltage and low drive current. The input impedance of this MOSFET is much higher than that of the general transistor. The...

The IXFH90N30 300V 90A N-Channel MOSFET by IXYS offers a low gate charge, excellent ruggedness with a fast intrinsic rectifier, and higher current handling capability that eliminates the need for multiple components. These are ideal for...

A metal–oxide–semiconductor field-effect transistor (MOSFET)is a field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of the device.  SuperFET II MOSFET is a brand-new high-voltage super-junction (SJ) MOSFET family that uses...

 An N-Channel MOSFET uses electrons to create a current channel. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is...