Power Transistors

The 4N80 is a three-terminal silicon device with a current conduction capability of 4A, a fast switching speed, a low on-state resistance, an 800V breakdown voltage rating, and a maximum operating temperature of -40°C. 5...

IGBT stands for insulated-gate bipolar transistor. It is a power transistor that combines an input MOS and an output bipolar transistor. The MC33153 is specifically designed as an IGBT driver for high power applications that...

The 11N120 is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device...

The  Fairchild  Power  Switch  FS7M-series  is  an  integrated Pulse Width Modulator (PWM) and Sense FET specifically designed  for  high  performance  offline  Switch  Mode  Power Supplies  (SMPS)  with  minimal  external  components.  This device   is   an   integrated ...

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching applications such as solar inverter, UPS, welder and PFC applications. Datasheet Features...

The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It isintended for power switching circuits and general-purpose amplifiers. The complementary. Datasheet Features Complementary to the MJE3055T Well-controlled hFE parameter for increased reliability Specifications Model...

D718 is a triple diffused epitaxial silicon NPN transistor. It is often used in high-power amplifier applications. It is recommended for the 45~50W Audio frequency amplifier output stage. Datasheet Features Recommended for 45~50W Audio frequency...

Insulated gate bipolar transistors or IGBTs are a form of a discrete semiconductor device that is generally used for power applications such as inverters, converters and power supplies. IGBT transistors have the advantage of combining...

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features...

Using novel field stop IGBT technology, ON Semiconductor’s /Fairchild's new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are...

The TIP42C is a -100V PNP complementary silicon plastic Power Transistor designed for use in general purpose power amplifier and switching applications. Its used in Switching applications Like in general switching, snubber circuits, clamp, Inverter and...

The TTA1943 is a high power PNP transistor developed by Toshiba. It is often utilized in high power audio circuits or AF amplifiers due to its high current gain and collector current. The TTA1943 is...

The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay...

The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is for power switching circuits intended for general-purpose amplifiers. The complementary PNP type is MJE2955T. Features: DC Current Gain Specified to 10...

The base current for TIP127 transistor is about 120mA and the Emitter base voltage is 5V. TIP127 can switch loads up to 60V with a peak current of 8A and a continuous current of 5A....