Power Transistors

It is an Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Co-packaged IGBTs are a natural extension of the well-known IGBT range from International Rectifier. They combine the features of an IGBT and an...

TOSHIBA 2SC5859 is a high-power NPN transistor, The Transistor 2SC5859 is a high-power transistor with a collector current of 23A and collector to emitter voltage of 750V. It is used in Audio frequency amplifiers, AF /RF...

G4PC50W is an N-Channel Insulated Gate Bipolar Transistor(IGBT). It is a Through-hole(THD) IGBT Transistor which consists of three terminals Emitter, Gate, and Collector. It has low conduction losses and minimal minority-carrier recombination that makes it...

2SC5858 is a triple diffused mesa type high power transistor, generally used in horizontal deflection output for HDTV, Digital TV, Projection TV. Datasheet Features High voltage Low saturation voltage High speed Specifications  Model 2SC5858  Brand...

20N60S5 is a power transistor. As we know that power transistors are used for power switching. A three-terminal device known as a power transistor is made of semiconductor materials. It has collector, base, and emitter...

2SC3998 Transistor is used in applications where high-speed switching and higher breakdown voltage are required. Features High speed (tf=100ns typ). High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. Specifications...

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications. The...

TOSHIBA GT60N321 is a Silicon N-Channel Insulated Gate Bipolar Transistor with Low saturation voltage VCE (sat) is 2.3 V (Typ.) (IC = 60 A). It is a through-hole(THD) active component with three terminals: gate, collector,...

The CT60AM-18F is an Insulated Gate Bipolar Transistor with a VCES of 900V, an IC of 60A, and an integrated fast-recovery diode. The VCE Saturation Voltage of the CT60AM-18F is low, and there is little...

BU508A is an NPN triple diffused silicon power transistor. The Collector current "Ic" is a function of the base current "Ib", a variation in base current gives a corresponding amplified variation in the collector current...

It is an Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Co-packaged IGBTs are a natural extension of the well-known IGBT range from International Rectifier. They combine the features of an IGBT and an...

FAIRCHILD C2073 is a silicon NPN power transistor. It is a Through-hole(THD) active component that consists of three terminals Base, Collector, and Emitter.  Datasheet Features TV vertical Deflection Output Complement to KSA940 Collector-Base Voltage VCBO...

13007A STMicroelectronics is an NPN Switching Transistor designed for high voltage, high speed, power switching in an inductive circuit. The MJE13007A is a silicon multi-epitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. They are...

This Insulated Gate Bipolar Transistor (IGBT) has a sturdy and cost-effective Ultra Field Stop Trench construction. It provides excellent performance in demanding switching applications, with low on-state voltage and reduced switching loss. The IGBT is...

RJP4009 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlight of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM...