Power Transistors
Infineon IRFZ44N 55V Single N-Channel Power MOSFET TO-220 package
Renesas RJP4007 1W N-Channel IGBT for Strobe Flash
ST MJE2955T 60V 10A PNP Power Transistor TO-220
ONSEMI 40N60 600V 40A IGBT TO-247
Renesas RJP4007 1W N-Channel IGBT for Strobe Flash
Renesas RJP4009 1.8W N-Channel IGBT for Strobe Flash
ST MJE3055T 60V 10A NPN Power Transistor TO-220 Package
Onsemi 7M0880 Power Switch Transistor
IXYS GP70N33 330V 70A Medium Frequency IGBT
IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor
K120T60 IGBT Transistor 600V, 120A
IXYS GP70N33 330V 70A Medium Frequency IGBT
IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor
K120T60 IGBT Transistor 600V, 120A
MC33153 Single IGBT Gate Driver IC
Infineon IRFZ44N 55V Single N-Channel Power MOSFET TO-220 package
The IR MOSFET family of power MOSFETs utilises proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches, and battery-powered applications. The...
Renesas RJP4007 1W N-Channel IGBT for Strobe Flash
RJP4007 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlights of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM...
ST MJE2955T 60V 10A PNP Power Transistor TO-220
The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It isintended for power switching circuits and general-purpose amplifiers. The complementary Datasheet Features Complementary to the MJE3055T Well-controlled hFE parameter for increased reliability Specifications Model...
ONSEMI 40N60 600V 40A IGBT TO-247
Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Datasheet Features...
Renesas RJP4007 1W N-Channel IGBT for Strobe Flash
RJP4007 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlights of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM...
Renesas RJP4009 1.8W N-Channel IGBT for Strobe Flash
RJP4009 IC is an 8 Pin IGBT with VSON-8 Package. It is used in strobe flashlight of cameras. Datasheet Features• Small surface mount package (VSON-8)• VCES: 400 V• ICM: 150 A @Tc = 70°C, CM...
ST MJE3055T 60V 10A NPN Power Transistor TO-220 Package
The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec T0-220 package. It is for power switching circuits intended for general-purpose amplifiers. The complementary PNP type is MJE2955T. Features: DC Current Gain Specified to 10...
Onsemi 7M0880 Power Switch Transistor
The Fairchild Power Switch FS7M-series is an integrated Pulse Width Modulator (PWM) and Sense FET specifically designed for high performance offline Switch Mode Power Supplies (SMPS) with minimal external components. This device is an integrated ...
IXYS GP70N33 330V 70A Medium Frequency IGBT
IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high-frequency applications. The diode is...
IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor
It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of...
K120T60 IGBT Transistor 600V, 120A
K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used...
IXYS GP70N33 330V 70A Medium Frequency IGBT
IXGP70N33 is a medium frequency insulated-gate bipolar transistor with high current handling capability. It features high power density and a very low switching loss, making it suitable for use in high-frequency applications. The diode is...
IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor
It is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high-frequency operation, a gate voltage of...
K120T60 IGBT Transistor 600V, 120A
K120T60 is an Insulated Gate Bipolar Transistor. It is a Three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices. These devices are mostly used...
MC33153 Single IGBT Gate Driver IC
IGBT stands for insulated-gate bipolar transistor. It is a power transistor that combines an input MOS and an output bipolar transistor. The MC33153 is specifically designed as an IGBT driver for high power applications that...